Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-11-22
2005-11-22
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185210, C365S185180
Reexamination Certificate
active
06967871
ABSTRACT:
A reference voltage generator circuit for nonvolatile memory devices is disclosed. The circuit has at least one sense amplifier bias reference voltage generator (SABRVG) for generating a reference voltage at a predetermined reference point that is coupled to a start-up bias reference voltage generator (SBRVG). It also includes a monitor reference voltage generator (MRVG) for generating a monitor reference voltage, and a comparison module for comparing the monitor reference voltage with the reference voltage to produce a start-up control signal, wherein the SBRVG enhances a changing speed of the reference voltage during a reading cycle of the nonvolatile memory and when the monitor reference and the reference voltages are matched, the start-up control signal stops the SBRVG from operating, thereby having the SABRVG maintain the reference voltage.
REFERENCES:
patent: 6411549 (2002-06-01), Pathak et al.
patent: 6687162 (2004-02-01), Hsueh et al.
patent: 6768677 (2004-07-01), Le et al.
Auduong Gene N.
Duane Morris LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
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