Reference potential generating circuit

Details Reference potential generating circuit Reference potential generating circuit

1988-05-10

1989-05-23

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307605, 307304, 307559, 307544, 3072968, 323313, 323314, H03K 1714, H03K 17687, H03K 501, H03K 386

Patent

active

048333425

ABSTRACT:
A reference potential generating circuit according to this invention includes a first insulated gate field effect transistor of an enhancement type, a second insulated gate field effect transistor of a depletion type and a voltage dividing circuit. The source of the first insulated gate field effect transistor is connected to the ground terminal, and the drain and gate thereof are connected to one another. The drain of the second insulated gate field effect transistor is connected to the power source and the gate thereof is connected to a connection node which connects the drain and gate of the first insulated gate field effect transistor. The voltage dividing circuit is connected between the drain of the first insulated gate field effect transistor and the source of the second insulated gate field effect transistor.

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Grunberg et al., "A Bias Circuit Compensated for Threshold and Supply Variations", IBM Technical Disclosure Bulletin, vol. 16, No. 1, pp. 25-26, Jun. 1973.

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