Reference cell for reading EEPROM memory devices

Details Reference cell for reading EEPROM memory devices Reference cell for reading EEPROM memory devices

1990-03-12

1992-01-14

Bowler, Alyssa H.

Static information storage and retrieval

Read only systems

Semiconductive

365185, 36518909, 365175, 365210, G11C 700, G11C 1604, G11C 1606

Patent

active

050816101

ABSTRACT:
A reference cell for reading EEPROM memory devices, capable of discharging any charges present in its own floating gate without varying the geometry of the cell with respect to that of the associated memory cells and without requiring specific manufacturing steps. For this purpose, a switch element, for example a diode, is provided between the floating gate and the substrate of the device and discharges any charges present in the floating gate toward the substrate during the cell idle state in the absence of read signals.

REFERENCES:
patent: 4780750 (1988-10-01), Nolan et al.
patent: 4802124 (1989-01-01), O'Brien, Jr.
patent: 4811291 (1989-03-01), de Ferron
patent: 4823316 (1989-04-01), Riva
patent: 4845680 (1989-07-01), Iwahashi
patent: 4937787 (1990-06-01), Kobatake

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