Redundant transistor dose monitor circuit using two ICs

Details Redundant transistor dose monitor circuit using two ICs Redundant transistor dose monitor circuit using two ICs

1997-09-03

1999-07-27

Hannaher, Constantine

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

25037014, G01T 126

Patent

active

059294485

ABSTRACT:
A total dose monitor circuit consists of three P-channel MOSFET devices packaged in a CD4007 device and an OP490 bipolar quad operational ampher used to measure and average the sensor outputs. The P-channel transistors in the CD4007 device are used as the total dose sensors in this circuit. MOS transistors are sensitive to total dose degradation and this sensitivity can be exploited in a dose monitoring circuit. The gate threshold voltage, VGS, will shift negatively as a function of total dose exposure due to the trapped charges that build up in the gate interface during ionizing radiation exposure. The threshold voltage shift is directly proportional to the total dose exposure level.

REFERENCES:
patent: 3614444 (1971-10-01), Nirschl et al.
patent: 3654468 (1972-04-01), Shah
patent: 4983840 (1991-01-01), Ouvrier-Buffet et al.
patent: 5309085 (1994-05-01), Sohn
patent: 5332903 (1994-07-01), Buehler et al.

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