Redundant interconnect high current bipolar device and...

Details Redundant interconnect high current bipolar device and... Redundant interconnect high current bipolar device and...

2008-01-08

2008-01-08

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

C257SE27076

Reexamination Certificate

active

07317240

ABSTRACT:
A device. The device includes two bipolar transistors electrically connected to each other. Each bipolar transistor of the two bipolar transistors may include a base contact and an emitter contact surrounding the base contact, wherein the emitters contacts of the two bipolar transistor are in electrical contact with each other. A first bipolar transistor of the two bipolar transistors may have a first wiring stack and a second bipolar transistor two bipolar transistors may have a second wiring stack, wherein the second wiring stack includes at least one more wiring level than the first wiring stack.

REFERENCES:
patent: H842 (1990-11-01), Ochs
patent: 5508552 (1996-04-01), Iranmanesh et al.
patent: 5519241 (1996-05-01), Oppermann et al.
patent: 5523614 (1996-06-01), Hashimoto
patent: 5637901 (1997-06-01), Beigel et al.
patent: 5850101 (1998-12-01), Iranmanesh
patent: 6020636 (2000-02-01), Adishian
patent: 6627925 (2003-09-01), Finlay

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