Redundant conductor structures for thin film FET driven liquid c

Details Redundant conductor structures for thin film FET driven liquid c Redundant conductor structures for thin film FET driven liquid c

1990-03-02

1992-02-25

Oberley, Alvin E.

Communications: electrical

Land vehicle alarms or indicators

Internal alarm or indicator responsive to a condition of the...

340719, 357 237, 359 59, G09G 336

Patent

active

RE0338290

ABSTRACT:
Redundancy is provided in the data and gate lines of the liquid crystal display device for improved reliability and greater fabrication yield. The data lines in particular are preferably fabricated in a multilayer structure with two conductive layers sandwiching a narrow insulating strip. The presence of the insulating strip permits the upper conductive line to be formed without step jumps which can exhibit a tendency for poor electrical connection. The upper and lower conductive layers of the data line are in contact for the length of the lower data line, contact being made on either side of the narrower insulating strip. Similar redundancy, without the necessity of providing an intermediary insulating layer is also provided for the gate lines. The redundancy provided in the present invention is particularly suitable for fabrication methods employed in thin film FET driven LCD devices.

REFERENCES:
patent: 4368523 (1983-01-01), Kawate
patent: 4543573 (1985-09-01), Fuyama et al.
patent: 4582395 (1986-04-01), Morozumi
patent: 4597001 (1986-06-01), Bortscheller et al.
patent: 4673969 (1987-06-01), Ariizumi et al.
patent: 4676761 (1987-06-01), Poujois
F. Morin and M. LeContellec, Silicon TFTs for Flat Panel Displays, Jpn. J. Appl. Phys. Suppl., pp. 481-485 (1982).
H. Hayama & M. Matsumura, Amorphous-Silicon Thin-Film Metal-Oxide-Semiconductor Transistors, Appl. Phys. Lett., vol. 36, No. 9, pp. 754-755 (May 1, 1980).
M. Powell et al., Amorphous Silicon-Silicon Nitride Tin-Film Transistors, Appl. Phys. Lett., vol. 38, No. 10, pp. 794-796 (1981).
A. J. Snell, Application of Amorphous Silicon Field Effect Tarnsistors in Addressable Liquid Crystal Display Panels, Appl. Phys. 24, pp. 357-362 (1981).
M. V. C. Stroomer et al., Amorphous-Silicon TFT Array for LCD Addressing, Electronic Letters, vol. 18, No. 10, pp. 858-859 (1982).
K. Suzuki et al., 14.2/9:25 A.M.: High-Resolution Transparent Type a-Si TFT LCDs SID Digest, pp. 146-147 (1983).
A. I. Lakatos, Promise and Challenge of Thin-Film Silicon Approaches to Active Matrices, 1982 Inter. Dis. Res. Conf., pp. 146-151.
A. J. Snell et al., Application of Amporphous-Silicon Field-Effect Transistors in Integrated Circuits, Appl. Phys. A26, pp. 83-86 (1981).

Affiliated with

Also associated with

Rating

Redundant conductor structures for thin film FET driven liquid c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Redundant conductor structures for thin film FET driven liquid c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Redundant conductor structures for thin film FET driven liquid c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1883874