Compositions – Barrier layer device compositions – Organic
Reexamination Certificate
2005-04-12
2005-04-12
Gupta, Yogendra N. (Department: 1751)
Compositions
Barrier layer device compositions
Organic
C252S062000, C252S520500, C252S518100, C252S519120, C252S519150, C252S520200, C338S0220SD, C264S617000
Reexamination Certificate
active
06878304
ABSTRACT:
A highly accurate reduction resistant thermistor exhibiting stable resistance characteristics even under conditions where the inside of a metal case of a temperature sensor becomes a reducing atmosphere, wherein when producing the thermistor comprised of a mixed sintered body (M1 M2)O3.AOx, the mean particle size of the thermistor material containing the metal oxide, obtained by heat treating, mixing, and pulverizing the starting materials, is made smaller than 1.0 μm and the sintered particle size of the mixed sintered body, obtained by shaping and firing this thermistor material, is made 3 μm to 20 μm so as to reduce the grain boundaries where migration of oxygen occurs, suppress migration of oxygen, and improve the reduction resistance.
REFERENCES:
patent: 5568116 (1996-10-01), Iwaya et al.
patent: 5610111 (1997-03-01), Iwaya et al.
patent: 5815063 (1998-09-01), Goto et al.
patent: 6143207 (2000-11-01), Yamada et al.
patent: 6164819 (2000-12-01), Moriwake et al.
patent: 19908444 (1999-09-01), None
patent: 0 001 511 (1979-04-01), None
patent: 0 626 356 (1994-11-01), None
patent: 0 655 752 (1995-05-01), None
patent: 0866472 (1998-03-01), None
patent: 0 866 472 (1998-09-01), None
patent: 2 775 537 (1999-09-01), None
patent: 9902475 (1999-09-01), None
patent: 06325907 (1994-11-01), None
patent: 07235405 (1995-09-01), None
patent: 08259320 (1996-10-01), None
patent: 09069417 (1997-03-01), None
patent: 10154604 (1998-09-01), None
patent: 10321048 (1998-12-01), None
patent: 2000012308 (2000-01-01), None
Kurano Atsushi
Kuzuoka Kaoru
Makino Daisuke
Ogata Itsuhei
Denso Corporation
Gupta Yogendra N.
Nippon Soken Inc.
Nixon & Vanderhye P.C.
Vijayakumar Kallambella M
LandOfFree
Reduction resistant thermistor, method of production... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reduction resistant thermistor, method of production..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduction resistant thermistor, method of production... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3395406