Reduction-reoxidation type semiconductor ceramic capacitor and m

Details Reduction-reoxidation type semiconductor ceramic capacitor and m Reduction-reoxidation type semiconductor ceramic capacitor and m

1987-02-25

1988-05-24

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, H01G 410, H01G 700

Patent

active

047470143

ABSTRACT:
A reduction-reoxidation type semiconductor ceramic capacitor according to the first invention includes: semiconductor ceramic; a reoxidated dielectric layer formed on the surface of the semiconductor ceramic; at least a pair of electrodes formed on the reoxidated dielectric layer; one of the electrodes being formed with an electrical conductor containing one kind or more of metals or metal compounds selected from Zn, Al, Ni, and Sn; one kind or more of metals in extremely small quantities selected from the metals being diffused into the interior of a portion, in contact with said electrode, of the reoxidated dielectric layer.
In addition, a method of manufacturing of the reduction-reoxidation type semiconductor ceramic capacitor comprising the steps of: rendering the semiconductor ceramic to a heat treatment at temperature of from 950.degree. to 1200.degree. C. to thereby form the reoxidated dielectric layer; providing an electrode material layer containing one kind or more of metals or metal compounds selected from Zn, Al, Ni and Sn on a portion forming one of said electrodes; and baking said electrode material layer so provided at temperature of from 600.degree. to 850.degree. C. to thereby form the electrode.

REFERENCES:
patent: 3124478 (1964-03-01), Cirkler et al.
patent: 3157835 (1964-11-01), Cirkler et al.
patent: 3243315 (1966-03-01), Markarian et al.
patent: 3264537 (1966-08-01), Delaney et al.
patent: 3274467 (1966-09-01), Graf
patent: 4097911 (1978-06-01), Dorrian
patent: 4486813 (1984-12-01), Maher
patent: 4490318 (1984-12-01), Masuyama et al.

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