Reduction/oxidation material removal method

Details Reduction/oxidation material removal method Reduction/oxidation material removal method

2006-05-30

2006-05-30

Barr, Michael (Department: 1746)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C134S001200, C438S725000

Reexamination Certificate

active

07051741

ABSTRACT:
A method of resist stripping for use during fabrication of semiconductor devices. A semiconductor substrate with a resist material formed thereon, such as a silicon wafer, is positioned in a sealed chamber in communication with a plasma-generating source. A gaseous material which includes a reducing agent is passed through the plasma-generating source to produce a plasma stream. The plasma stream is directed at the semiconductor substrate for a predetermined period of time to remove the resist material from the semiconductor substrate. A reducing environment is produced in the sealed chamber by the plasma stream, which can passivate and strip the resist material simultaneously.

REFERENCES:
patent: 4619836 (1986-10-01), Prabhu et al.
patent: 4623556 (1986-11-01), Brown et al.
patent: 4699689 (1987-10-01), Bersin
patent: 4711836 (1987-12-01), Ferreira
patent: 4732838 (1988-03-01), Sechi et al.
patent: 4776892 (1988-10-01), Steppan et al.
patent: 4867799 (1989-09-01), Grebinski
patent: 4873177 (1989-10-01), Tanaka et al.
patent: 4961820 (1990-10-01), Shinagawa et al.
patent: 5007983 (1991-04-01), Lerner et al.
patent: 5057187 (1991-10-01), Shinagawa et al.
patent: 5201960 (1993-04-01), Starov
patent: 5296093 (1994-03-01), Szwejkowski et al.
patent: 5545309 (1996-08-01), Shimizu et al.
patent: 5567574 (1996-10-01), Hasemi et al.
patent: 5773201 (1998-06-01), Fujimura et al.
patent: 5882489 (1999-03-01), Bersin et al.
patent: 5885361 (1999-03-01), Kikuchi et al.
patent: 5888309 (1999-03-01), Yu
patent: 5925501 (1999-07-01), Zhang et al.
patent: 6105588 (2000-08-01), Li et al.
patent: 6242054 (2001-06-01), Baalmann et al.
patent: 6412497 (2002-07-01), Li et al.

Affiliated with

Also associated with

Rating

Reduction/oxidation material removal method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduction/oxidation material removal method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduction/oxidation material removal method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3597526