Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-04-24
2007-04-24
Richards, N. Drew (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S040000, C257SE51030
Reexamination Certificate
active
11045511
ABSTRACT:
A semiconductor device includes a semiconductor path, the semiconductor path including an organic semiconductor material, a first contact to inject charge carriers into the semiconductor path, a second contact to extract charge carriers from the semiconductor path, and a layer including phosphine arranged between the first contact and the semiconductor path and/or between the second contact and the semiconductor path. The phosphine in the layer acts as a charge transfer molecule which makes it easier to transfer charge carriers between contact and organic semiconductor material. As a result, the contact resistance between contact and organic semiconductor material can be reduced considerably.
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Ioannis Kymissis, “High-Performance Bottom Electrode Organic Thin-Film Transistors”, IEEE Transactions on Electron Devices, vol. 48, No. 6, Jun. 2001, pp. 1060-1064.
Halik Marcus
Klauk Hagen
Schmid Günter
Terzoglu Efstratios
Zschieschang Ute
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Karimy Mohammad Timor
Richards N. Drew
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