Reduction of the contact resistance in organic field-effect...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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C257S040000, C257SE51030

Reexamination Certificate

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11045511

ABSTRACT:
A semiconductor device includes a semiconductor path, the semiconductor path including an organic semiconductor material, a first contact to inject charge carriers into the semiconductor path, a second contact to extract charge carriers from the semiconductor path, and a layer including phosphine arranged between the first contact and the semiconductor path and/or between the second contact and the semiconductor path. The phosphine in the layer acts as a charge transfer molecule which makes it easier to transfer charge carriers between contact and organic semiconductor material. As a result, the contact resistance between contact and organic semiconductor material can be reduced considerably.

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patent: 2 379 085 (2003-02-01), None
patent: WO 01/01502 (2001-01-01), None
Ioannis Kymissis, “High-Performance Bottom Electrode Organic Thin-Film Transistors”, IEEE Transactions on Electron Devices, vol. 48, No. 6, Jun. 2001, pp. 1060-1064.

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