Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-04-29
1999-03-09
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
156345, 216 70, H01L 2100
Patent
active
058800344
ABSTRACT:
Uniformity of plasma density and potential are increased by reducing plasma confinement through use of a non-uniform, graded magnetic field by asymmetric energization of electromagnets with a waveform including harmonics of a fundamental frequency. The magnetic field strength or intensity decreases in the direction of ExB drift of energetic electrons within the plasma which tends to cause additional ionization in the plasma and a gradient of plasma density and potential. Thus, increase in ionization due to ExB drift is balanced by reduction of plasma confinement. Uniformity of average exposure to the plasma is further increased by rotation of the magnetic field. Uniformity of plasma potential or wafer bias is further improved by modulation of the radio frequency (RF) power used to form the plasma in synchronism with decreases in the magnetic field during switching for magnetic field rotation.
REFERENCES:
patent: 4740268 (1988-04-01), Bukhman
patent: 5133825 (1992-07-01), Hakamata et al.
patent: 5346579 (1994-09-01), Cook et al.
patent: 5440206 (1995-08-01), Kurono et al.
patent: 5534108 (1996-07-01), Oian et al.
Karta Glenn E.
Powell William
Princeton University
LandOfFree
Reduction of semiconductor structure damage during reactive ion does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reduction of semiconductor structure damage during reactive ion , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduction of semiconductor structure damage during reactive ion will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1320695