Reduction of polycide residues through helium backside pressure

Details Reduction of polycide residues through helium backside pressure Reduction of polycide residues through helium backside pressure

1993-01-21

1994-08-30

Thomas, Tom

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

136646, 437226, 437248, 437943, 148DIG131, B44C 122

Patent

active

053424760

ABSTRACT:
Disclosed are methods for reducing the degree of underetching and particulate contamination occurring during dry non-isotropic etching of a polycide layer on the surface of a silicon wafer maintained in a wafer holder wherein the backside of the holder is cooled with a stream of helium gas. Specifically, in the disclosed methods, dry non-isotropic etching of the polycide layer is conducted either in the absence of backside cooling or the helium gas flow utilized in backside cooling is maintained at a pressure of no more than 3 torr.

REFERENCES:
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4709655 (1987-12-01), Van Mastrigt
patent: 4999320 (1991-03-01), Douglas
patent: 5096536 (1992-05-01), Cathey, Jr.
patent: 5164034 (1992-11-01), Arai et al.
patent: 5203958 (1993-04-01), Arai et al.
Wolf et al., "Silicon Processing for the VLSI Era", vol. 1, Lattice Press, Sunset Beach, Calif., 1986, pp. 388-393, 557-558.

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