Reduction of parasitic effects in floating body mosfets

Details Reduction of parasitic effects in floating body mosfets Reduction of parasitic effects in floating body mosfets

1995-04-24

1996-11-26

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

257 74, 257610, 257612, 257617, 257349, H01L 29167

Patent

active

055788653

ABSTRACT:
A semiconductor fabrication method improves the voltage characteristic of floating-body MOSFETs by creating recombination centers near the source-body junction of the device. A MOSFET is fabricated through the passivation oxidation stage, and a photolithography step is used to expose the source region. Implantation is then performed using one of two types of material. A first type creates electron traps of predetermined energy in the vicinity of the source-body junction. A second type creates defects in the crystalline structure of the semiconductor material. Both implantation types create recombination centers in the material. This allows the discharge through the source-body junction of charges built up in the body region.

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