Reduction of parasitic effects in floating body MOSFETs

Details Reduction of parasitic effects in floating body MOSFETs Reduction of parasitic effects in floating body MOSFETs

1993-11-16

1995-05-30

Thomas, Tom

Fishing, trapping, and vermin destroying

437 21, 437 24, 437 41, H01L 21265

Patent

active

054200555

ABSTRACT:
A semiconductor fabrication method improves the voltage characteristic of floating-body MOSFETs by creating recombination centers near the source-body junction of the device. A MOSFET is fabricated through the passivation oxidation stage, and a photolithography step is used to expose the source region. Implantation is then performed using one of two types of material. A first type creates electron traps of predetermined energy in the vicinity of the source-body junction. A second type creates defects in the crystalline structure of the semiconductor material. Both implantation types create recombination centers in the material. This allows the discharge through the source-body junction of charges built up in the body region.

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