Reduction of optical proximity effect of bit line pattern in DRA

Details Reduction of optical proximity effect of bit line pattern in DRA Reduction of optical proximity effect of bit line pattern in DRA

1998-07-08

2000-01-18

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

060156414

ABSTRACT:
A bitline mask pattern having reduced optical proximity effect for use in manufacturing a semiconductor memory device is disclosed. The bitline mask pattern comprises: a plurality of bitlines having a plurality of contact pads that are equally spaced apart. The bitlines are arranged parallel to each other in a columnar array and such that alternate bitlines have their contact pads aligned with each other. The contact pads having a rectangular shape, but at each corner of the contact pad, rectangular corner portions removed, and at opposing sides of the contact pads, rectangular side portions are removed.

REFERENCES:
patent: 5585210 (1996-12-01), Lee et al.
patent: 5783336 (1998-07-01), Aoki et al.

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