Reduction of leakage current in InGaAs diodes

Details Reduction of leakage current in InGaAs diodes Reduction of leakage current in InGaAs diodes

1982-01-18

1983-08-02

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 29576B, 29576T, 29580, 148172, 148 15, 156662, H01L 700

Patent

active

043964435

ABSTRACT:
The reverse leakage current of InGaAs diodes, in particular the dark current of In.sub.0.53 Ga.sub.0.47 As photodiodes, is reduced by a treatment in a 1:1:X solution of H.sub.2 O.sub.2 :H.sub.2 SO.sub.4 :H.sub.2 O where 10.ltoreq..times..ltoreq.100 approximately.

REFERENCES:
patent: 3982315 (1976-09-01), Kubo
patent: 4213805 (1980-07-01), Tsukada
patent: 4321613 (1982-03-01), Hughes et al.
Nishitani et al., J. of Electrochem. Soc., vol. 126, No. 12, Dec. 1979, pp. 2269-2271.
Takahashi, Japanese Journal of Applied Physics, vol. 19, No. 10, Oct. 1980, Tokyo, Japan, pp. 1947-1952.
Diadiuk et al., IEEE Electron Device Letters, vol. EDL-l, No. 9, Sep. 1980, pp. 177 and 178.
Kelly et al., J. of Electrochem. Soc., vol. 125, No. 6, Jun. 1978, pp. 860-865.

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