Reduction of foreign particulate matter on semiconductor wafers

Details Reduction of foreign particulate matter on semiconductor wafers Reduction of foreign particulate matter on semiconductor wafers

1992-01-29

1994-03-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437946, 134 3, 134 28, H01L 21306

Patent

active

052945707

ABSTRACT:
A substantial reduction in the foreign particulate matter contamination on surfaces, such as the surfaces of semiconductor wafers, is achieved by treating the surfaces with a solution comprising a strong acid and a very small amount of a fluorine-containing compound. A preferred method employs a solution containing sulfuric acid, hydrogen peroxide and a very small amount of hydrofluoric acid, which is effective in reducing foreign particulate matter contamination, without significant etching, of the surface being treated.

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