Reduction of field oxide encroachment in MOS fabrication

Details Reduction of field oxide encroachment in MOS fabrication Reduction of field oxide encroachment in MOS fabrication

1984-10-01

1986-03-25

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

148DIG85, 148DIG86, 148DIG133, 357 50, 29578, H01L 2176, H01L 21316

Patent

active

045773947

ABSTRACT:
Reduction of the encroachment of a grown field oxide layer during MOS device fabrication by covering a masking anti-oxidant layer that defines the active element area of a semiconductor substrate with a layer of passivation material which extends over the edge of the anti-oxidant layer to contact the pad oxide over the semiconductor substrate surface.

REFERENCES:
patent: 4272308 (1981-06-01), Varshney
patent: 4407851 (1983-10-01), Kurosawa et al.
patent: 4418094 (1983-11-01), See et al.
Warren, M. J. "Field-Implant Spacer for Isolation Devices" in IBM Technical Disclosure Bulletin, 27(6), 11-1984, p. 3245.

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