Reduction of contaminant buildup in semiconductor processing app

Coating apparatus – Gas or vapor deposition – With treating means

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118715, 156345, C23C 1600

Patent

active

055781314

ABSTRACT:
The present invention provides an apparatus for semiconductor processing in which the reactor chamber and the vacuum conduit means connected to the chamber are coated with a film of halogenated polymer material having a low vapor pressure and a low sticking coefficient. Preferred materials include low molecular weight polyfluoroethylene polymers such as polytetrafluoroethylene and polychlorotrifluoro-ethylene. A method is provided to prevent contaminant buildup on coated surfaces of semiconductor processing chambers and vacuum conduit means connected thereto during processing of a workpiece.

REFERENCES:
patent: 3619249 (1971-11-01), Cannon
patent: 4022928 (1977-05-01), Piwcyzk
patent: 5244730 (1993-09-01), Nguyen

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