Static information storage and retrieval – Information masking – Polarization
Reexamination Certificate
2005-07-26
2005-07-26
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Information masking
Polarization
C365S145000, C365S207000, C365S214000, C365S153000, C365S151000, C365S045000, C369S013300
Reexamination Certificate
active
06922350
ABSTRACT:
The write disturb that occurs in polymer memories may be reduced by writing back data after a read in a fashion which offsets any effect on the polarity of bits in bit lines associated with the addressed bit. For example, each time the data is written back, its polarity may be alternately changed. In another embodiment, the polarity may be randomly changed.
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Coulson Richard L.
Faber Robert W.
Lueker Jonathan C.
Intel Corporation
Nguyen Viet Q.
Trop Pruner & Hu P.C.
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