Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-08-13
2011-12-20
Bryant, Kiesha (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S784000, C257S758000, C257S776000, C438S612000, C438S617000, C438S611000, C438S461000
Reexamination Certificate
active
08080859
ABSTRACT:
The present invention relates to a semiconductor component that has a substrate and a projecting electrode. The projecting electrode has a substrate face, which faces the substrate and which comprises a first substrate-face section separated from the substrate by a gap. The gap allows a stress-compensating deformation of the projecting electrode relative to the substrate. The substrate face of the projecting electrode further comprises a second substrate-face section, which is in fixed mechanical and electrical connection with the substrate. Due to a smaller footprint of mechanical connection between the projecting electrode and the substrate, the projecting electrode can comply in three dimensions to mechanical stress exerted, without passing the same amount of stress on to the substrate, or to an external substrate in an assembly. This results in an improved lifetime of an assembly, in which the semiconductor component is connected to an external substrate by the projecting electrode.
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Jasper Joerg
Jasper, legal representative Ute
Bryant Kiesha
Green Telly
NXP B.V.
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