Reducing shunts in memories with phase-change material

Details Reducing shunts in memories with phase-change material Reducing shunts in memories with phase-change material

2007-01-09

2007-01-09

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S621000, C257SE45002, C438S003000, C438S084000, C438S095000

Reexamination Certificate

active

11038336

ABSTRACT:
A memory cell may include a phase-change material. Adhesion between the phase-change material and a dielectric or other substrate may be enhanced by using an adhesion enhancing interfacial layer. Conduction past the phase-change material through the interfacial layer may be reduced by providing a discontinuity or other feature that reduces or prevents conduction along said interfacial layer.

REFERENCES:
patent: 6545287 (2003-04-01), Chiang

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