Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1996-03-07
1998-11-17
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257764, 257771, H01L 310232
Patent
active
058380523
ABSTRACT:
The present invention provides methods of producing an anti-reflective layer on a semiconductor wafer/device and wafers/devices including that anti-reflective layer. The anti-reflective layer is produced by annealing layers of titanium and aluminum on a wafer/device to provide a roughened surface that significantly reduces reflectivity to improve the accuracy and definition provided by optical lithography processes.
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W.Y.-C. Lai et al., "The Use of Ti as an Antireflective Coating for the Laser Planarization of Al for VLSI Metallization", 6th Int'l IEEE VLSI Multilevel Interconnect Conference, Cat. No. 89-TH0259-2, Jun. 12-13, 1989, p. 501.
R. Lui et al., "Study of Pulsed Laser Planarization of Aluminum for VLSI Metallization", 6th Int'l IEEE VLSI Multilevel Interconnect Conference, Cat No. 89TH0259-2, Jun. 12-13, pp. 329-335.
Clark S. V.
Micro)n Technology, Inc.
Saadat Mahshid D.
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