Reducing read disturb for non-volatile storage

Static information storage and retrieval – Floating gate – Disturbance control

Reexamination Certificate

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C365S185180, C365S185190, C365S185240, C365S189150

Reexamination Certificate

active

07495956

ABSTRACT:
A system is disclosed for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source side of the NAND string channel during a read process. Because the source side of the NAND string channel is not boosted, at least one form of read disturb is minimized or does not occur.

REFERENCES:
patent: 5101378 (1992-03-01), Radjy et al.
patent: 5218686 (1993-06-01), Thayer
patent: 5388247 (1995-02-01), Goodwin et al.
patent: 5449947 (1995-09-01), Chen et al.
patent: 5581504 (1996-12-01), Chang
patent: 5586294 (1996-12-01), Goodwin et al.
patent: 5668971 (1997-09-01), Neufeld
patent: 5764572 (1998-06-01), Hammick
patent: 5867429 (1999-02-01), Chen et al.
patent: 5898615 (1999-04-01), Chida
patent: 5917766 (1999-06-01), Tsuji et al.
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6061280 (2000-05-01), Aritome
patent: 6154391 (2000-11-01), Takeuchi et al.
patent: 6175522 (2001-01-01), Fang
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6240016 (2001-05-01), Haddad et al.
patent: 6380033 (2002-04-01), He et al.
patent: 6449685 (2002-09-01), Leung
patent: 6456528 (2002-09-01), Chen
patent: 6522580 (2003-02-01), Chen et al.
patent: 6522583 (2003-02-01), Kanda et al.
patent: 6535423 (2003-03-01), Trivedi et al.
patent: 6542407 (2003-04-01), Chen et al.
patent: 6570785 (2003-05-01), Mangan et al.
patent: 6577533 (2003-06-01), Sakui et al.
patent: 6614070 (2003-09-01), Hirose et al.
patent: 6643188 (2003-11-01), Tanaka et al.
patent: 6657891 (2003-12-01), Shibata et al.
patent: 6707714 (2004-03-01), Kawamura
patent: 6717847 (2004-04-01), Chen
patent: 6771536 (2004-08-01), Li et al.
patent: 6781877 (2004-08-01), Cernea et al.
patent: 6807095 (2004-10-01), Chen et al.
patent: 6819592 (2004-11-01), Noguchi et al.
patent: 6879520 (2005-04-01), Hosono et al.
patent: 6891753 (2005-05-01), Cernea
patent: 6894931 (2005-05-01), Yaegashi et al.
patent: 6925009 (2005-08-01), Noguchi et al.
patent: 6983428 (2006-01-01), Cernea
patent: 6987693 (2006-01-01), Cernea et al.
patent: 6996003 (2006-02-01), Li et al.
patent: 7006379 (2006-02-01), Noguchi et al.
patent: 7009881 (2006-03-01), Noguchi
patent: 7023733 (2006-04-01), Guterman et al.
patent: 7023736 (2006-04-01), Cernea et al.
patent: 7023739 (2006-04-01), Chen et al.
patent: 7046568 (2006-05-01), Cernea
patent: 7177191 (2007-02-01), Fasoli et al.
patent: 7196931 (2007-03-01), Cernea et al.
patent: 7262994 (2007-08-01), Fong et al.
patent: 7295473 (2007-11-01), Fong et al.
patent: 7349258 (2008-03-01), Fong et al.
patent: 7425742 (2008-09-01), Nazarian
patent: 2004/0057318 (2004-03-01), Cernea et al.
patent: 2005/0036369 (2005-02-01), Lee et al.
patent: 2005/0169082 (2005-08-01), Cernea
patent: 1172822 (2002-01-01), None
patent: 1341185 (2003-09-01), None
patent: 362140294 (1987-06-01), None
patent: 63171495 (1988-07-01), None
patent: 6309891 (1994-11-01), None
patent: 2003217288 (2003-07-01), None
patent: 2004030866 (2004-01-01), None
U.S. Appl. No. 12/021,729, filed Jan. 29, 2008.
U.S. Appl. No. 12/021,741, filed Jan. 29, 2008.
International Preliminary Report on Patentability dated Jun. 19, 2008 in PCT Application No. PCT/US2006/046126.
Notice of Allowance dated Sep. 11, 2008 in U.S. Appl. No. 12/021,741.
Official Action dated Oct. 14, 2008 in European Patent Application No. 06844753.1.

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