Reducing read disturb for non-volatile storage

Details Reducing read disturb for non-volatile storage Reducing read disturb for non-volatile storage

2008-01-29

2008-10-21

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Floating gate

Disturbance control

C365S185180, C365S185170, C365S185240, C365S185250, C365S185190

Reexamination Certificate

active

07440318

ABSTRACT:
A system is disclosed for reducing or removing a form of read disturb in a non-volatile storage device. One embodiment seeks to prevent read disturb by eliminating or minimizing boosting of the channel of the memory elements. For example, one implementation prevents or reduces boosting of the source side of the NAND string channel during a read process. Because the source side of the NAND string channel is not boosted, at least one form of read disturb is minimized or does not occur.

REFERENCES:
patent: 5101378 (1992-03-01), Radjy et al.
patent: 5449947 (1995-09-01), Chen et al.
patent: 5581504 (1996-12-01), Chang
patent: 5764572 (1998-06-01), Hammick
patent: 5867429 (1999-02-01), Chen et al.
patent: 5898615 (1999-04-01), Chida
patent: 5917766 (1999-06-01), Tsuji et al.
patent: 6046935 (2000-04-01), Takeuchi et al.
patent: 6154391 (2000-11-01), Takeuchi et al.
patent: 6175522 (2001-01-01), Fang
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6240016 (2001-05-01), Haddad et al.
patent: 6380033 (2002-04-01), He et al.
patent: 6456528 (2002-09-01), Chen
patent: 6522580 (2003-02-01), Chen et al.
patent: 6522583 (2003-02-01), Kanda et al.
patent: 6535423 (2003-03-01), Trivedi et al.
patent: 6542407 (2003-04-01), Chen et al.
patent: 6570785 (2003-05-01), Mangan et al.
patent: 6577533 (2003-06-01), Sakui et al.
patent: 6614070 (2003-09-01), Hirose et al.
patent: 6643188 (2003-11-01), Tanaka et al.
patent: 6657891 (2003-12-01), Shibata et al.
patent: 6707714 (2004-03-01), Kawamura
patent: 6717847 (2004-04-01), Chen
patent: 6771536 (2004-08-01), Li et al.
patent: 6781877 (2004-08-01), Cernea et al.
patent: 6807095 (2004-10-01), Chen et al.
patent: 6819592 (2004-11-01), Noguchi et al.
patent: 6879520 (2005-04-01), Hosono et al.
patent: 6891753 (2005-05-01), Cernea
patent: 6925009 (2005-08-01), Noguchi et al.
patent: 6983428 (2006-01-01), Cernea
patent: 6987693 (2006-01-01), Cernea et al.
patent: 6996003 (2006-02-01), Li et al.
patent: 7006379 (2006-02-01), Noguchi et al.
patent: 7009881 (2006-03-01), Noguchi
patent: 7023733 (2006-04-01), Guterman et al.
patent: 7023736 (2006-04-01), Cernea et al.
patent: 7023739 (2006-04-01), Chen et al.
patent: 7046568 (2006-05-01), Cernea
patent: 7177191 (2007-02-01), Fasoli et al.
patent: 7196931 (2007-03-01), Cernea et al.
patent: 7262994 (2007-08-01), Fong et al.
patent: 7295473 (2007-11-01), Fong et al.
patent: 7298647 (2007-11-01), Li et al.
patent: 7349258 (2008-03-01), Fong et al.
patent: 2004/0057318 (2004-03-01), Cernea et al.
patent: 2005/0036369 (2005-02-01), Lee et al.
patent: 2005/0169082 (2005-08-01), Cernea
patent: 2007/0153573 (2007-07-01), Fong et al.
patent: 2008/0137411 (2008-06-01), Fong et al.
patent: 2008/0137423 (2008-06-01), Fong et al.
patent: 2008/0137424 (2008-06-01), Fong et al.
patent: 1172822 (2002-01-01), None
patent: 1341185 (2003-09-01), None
patent: 362140294 (1987-06-01), None
patent: 362140294 (1987-06-01), None
patent: 363171495 (1988-07-01), None
patent: 406309891 (1994-11-01), None
patent: 2003217288 (2003-07-01), None
patent: 2004030866 (2004-01-01), None
U.S. Appl. No. 12/021,741, filed Jan. 29, 2008.
U.S. Appl. No. 12/021,761, filed Jan. 29, 2008.
International Preliminary Report on Patentability dated Jun. 19, 2008 in PCT Application No. PCT/US2006/046126.

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