Reducing junction capacitance and increasing current gain in col

Details Reducing junction capacitance and increasing current gain in col Reducing junction capacitance and increasing current gain in col

1997-01-16

1998-07-21

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257565, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

057839662

ABSTRACT:
This is a method of fabricating a bipolar transistor on a wafer. The method can comprise: forming a doped emitter contact layer 31 on a substrate 30; forming a doped emitter layer 32 on top of the emitter contact layer, the emitter layer doped same conductivity type as the emitter contact layer; forming a doped base epilayer 34 on top of the emitter layer, the base epilayer doped conductivity type opposite of the emitter layer; forming a doped collector epilayer 36, the collector epilayer doped conductivity type opposite of the base layer to form the bipolar transistor; forming an collector contact 38 on top of the collector layer; forming a base contact 40 on top of the base layer; forming a emitter contact 44 on top of the emitter contact layer; and selective etching the emitter layer to produce an undercut 45 beneath the base layer.

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