Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-06-12
2007-06-12
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185240, C365S185290
Reexamination Certificate
active
11021872
ABSTRACT:
For a non-volatile memory system, compressing the erase threshold voltage distribution into the lowest threshold voltage state will decrease the valid data threshold voltage window. Decreasing the valid data threshold voltage window reduces the floating gate to floating gate coupling effect. The compression can be performed as part of the erase process or part of the programming operation.
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Fong Yupin
Guterman Daniel C.
Lam David
Sandisk Corporation
Vierra Magen Marcus & DeNiro LLP
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