Reducing dislocations in semiconductors utilizing repeated therm

Details Reducing dislocations in semiconductors utilizing repeated therm Reducing dislocations in semiconductors utilizing repeated therm

1988-09-07

1992-02-25

Saba, William G.

Fishing, trapping, and vermin destroying

148DIG3, 148DIG25, 148DIG97, 156612, 357 60, 437 84, 437108, 437132, 437248, 437976, H01L 2120, H01L 21322

Patent

active

050913336

ABSTRACT:
Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

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