Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1984-12-04
1986-12-30
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 29576T, 148 15, 148174, 148DIG3, 148DIG25, 148DIG97, 156612, 357 60, H01L 2120, H01L 21322, H01L 21324
Patent
active
046327126
ABSTRACT:
Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.
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Berkenblit et al, "Reduction of Stress in Single Crystal . . . Layers", IBM Tech. Discl. Bull., vol. 12, No. 9, Feb. 1970, p. 1489.
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Tsaur et al., "Efficient GaAa/Ge/Si Solar Cells", Conf. Rec., 16th IEEE Photovoltaic Spec. Conf., San Diego, Calif., Sep. 27-30, 1982, pp. 1143-1148.
Davis Frances M.
Fan John C. C.
Gale Ronald P.
Tsaur Bor-Yeu
Engellenner Thomas J.
Maslow James E.
Massachusetts Institute of Technology
Saba William G.
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