Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-10-31
2006-10-31
Deo, Duy-Vu N (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S707000, C438S710000, C438S714000
Reexamination Certificate
active
07129178
ABSTRACT:
A method is provided which includes etching one or more layers in an etch chamber while introducing a noble gas heavier than helium into the etch chamber. In a preferred embodiment, the introduction of such a noble gas may reduce the formation of defects within an etched portion of the semiconductor topography. Such defects may include bilayer mounds of nitride and a material comprising silicon, for example. In some embodiments, the method may include etching a stack of layers within a single etch chamber. The stack of layers may include, for example, a nitride layer interposed between an anti-reflective layer and an underlying layer. In addition, the single etch chamber may be a plasma etch chamber designed to etch materials comprising silicon. As such, the method may include etching an anti-reflective layer in a plasma etch chamber designed to etch materials comprising silicon.
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Arnzen Daniel J.
Bamnolker Hanna
Schwarz Benjamin C. E.
Yan Chan Lon
Cypress Semiconductor Corp.
Daffer Kevin L.
Daffer McDaniel LLP
Deo Duy-Vu N
Lettang Mollie E.
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