Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Reexamination Certificate
2005-02-08
2005-02-08
Niebling, John F. (Department: 2812)
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
Reexamination Certificate
active
06852456
ABSTRACT:
Methods, systems, products and apparatuses are disclosed herein relating to registration and asymmetrically deposited films, and more specifically, to reducing asymmetrically deposited film induced registration measurement error.
REFERENCES:
patent: 4794646 (1988-12-01), Takeuchi et al.
patent: 5057689 (1991-10-01), Nomura et al.
patent: 5414519 (1995-05-01), Han
patent: 5498500 (1996-03-01), Bae
patent: 5602492 (1997-02-01), Cresswell et al.
patent: 5617340 (1997-04-01), Cresswell et al.
patent: 5641960 (1997-06-01), Okubo et al.
patent: 5659172 (1997-08-01), Wagner et al.
patent: 5699282 (1997-12-01), Allen et al.
patent: 5857258 (1999-01-01), Penzes et al.
patent: 5953128 (1999-09-01), Ausschnitt
patent: 5965309 (1999-10-01), Ausschnitt
patent: 6033582 (2000-03-01), Lee
patent: 6040618 (2000-03-01), Akram
patent: 6050279 (2000-04-01), Goad
patent: 6064486 (2000-05-01), Chen et al.
patent: 6077756 (2000-06-01), Lin et al.
patent: 6091845 (2000-07-01), Pierrat et al.
patent: 6137578 (2000-10-01), Ausschnitt
patent: 6143629 (2000-11-01), Sato
Aronson, Arnold J.,Fundamentals of Sputtering,Microelectronic Manufacturing and Testing, Jan. 1987, vol. 10, No. 1, pp. 22-23.
Van Zant, Peter, Microchip Fabrication: A Practical Guide to Semiconductor Processing, Fourth Edition, 2000, pp. 411-416.
Wolf, Stanley, et al.,Aluminum Thin Films and Physical Vapor Deposition in ULSI,Silicon Processing for the VLSI Era, vol. 1: Process Technology, Second Edition, Chapter 11, pp. 434-487, 2000.
Bowes Steve W.
Byers Erik
Micro)n Technology, Inc.
Niebling John F.
Stevenson Andre′ C.
Whyte Hirschboeck Dudek SC
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