Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-05-17
2005-05-17
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S415000, C250S289000, C429S006000, C429S006000
Reexamination Certificate
active
06894383
ABSTRACT:
Briefly, a reduced substrate Micro-Electro-Mechanical Systems (MEMS) device, for example, a low-loss Film Bulk Acoustic Resonators (FBAR) filter or a low-loss FBAR Radio Frequency filter, and a process and a system to produce the same. A reduced substrate MEMS device in accordance with embodiments of the present invention may include a membrane bonded between packaging parts. A process in accordance with embodiments of the present invention may include bonding a first packaging part to a MEMS device including a support substrate, removing the support substrate, and bonding a second packaging part to the MEMS device.
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Teomim, Doron, et al. “An innovative approach to wafer-level MEMS packaging”, Packaging/Assembly Solid State Technology, Jan. 2002. www.solid-state.com.
Bar-Sadeh Eyal
Ginsburg Eyal
Talalyevsky Alexander
Eitan, Pearl, Latzer & Cohen Zedek LLP
Intel Corporation
Tran Minhloan
Tran Tan
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