Reduced size field effect transistor

Details Reduced size field effect transistor Reduced size field effect transistor

1998-08-13

2000-06-27

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257522, 257728, H01L 29772

Patent

active

060810068

ABSTRACT:
A reduced size field effect transistor is disclosed which has a substrate with a body of semiconductor material having an active region on one surface thereof, and a common conductor located in remote insulated relation to the one surface of the semiconductor body, a pair of source electrodes, a drain electrode and a gate electrode located on the one surface, with the drain electrode having drain fingers located on opposite sides of each of the source electrodes and an air bridge overlying the source electrodes and interconnecting the drain fingers located on opposite sides of each of the source electrodes, the gate electrode having a connection pad at one side thereof and a manifold extending between the source electrodes, and having gate fingers extending between the drain fingers and the source electrodes, and conductive connections between the source electrodes and the common conductor.

REFERENCES:
patent: 3969745 (1976-07-01), Blocker, III
patent: 4549197 (1985-10-01), Brehm et al.
patent: 4587541 (1986-05-01), Dalman et al.
patent: 4683443 (1987-07-01), Young et al.
patent: 4734751 (1988-03-01), Hwang et al.
patent: 4785202 (1988-11-01), Toyoda
patent: 4833095 (1989-05-01), Calviello
patent: 4853649 (1989-08-01), Seino et al.
patent: 4896194 (1990-01-01), Suzuki
patent: 4921814 (1990-05-01), Ishikawa et al.
patent: 4959705 (1990-09-01), Lemnios et al.
patent: 4974039 (1990-11-01), Schindler et al.
patent: 4992764 (1991-02-01), Ayasli
patent: 5023677 (1991-06-01), Truitt
patent: 5025296 (1991-06-01), Fullerton et al.
patent: 5160984 (1992-11-01), Mochizuki et al.
patent: 5162258 (1992-11-01), Lemnios et al.
patent: 5185534 (1993-02-01), Sakamoto et al.
patent: 5208726 (1993-05-01), Apel
patent: 5227738 (1993-07-01), Shiga
patent: 5233313 (1993-08-01), Kohno et al.
patent: 5267020 (1993-11-01), Marsland et al.
patent: 5274256 (1993-12-01), Shiga
patent: 5283452 (1994-02-01), Shih et al.
patent: 5287072 (1994-02-01), Kojima et al.
patent: 5324981 (1994-06-01), Kobiki et al.
patent: 5343172 (1994-08-01), Utsu et al.
patent: 5351163 (1994-09-01), Dawson et al.
patent: 5381157 (1995-01-01), Shiga
patent: 5386130 (1995-01-01), Gamand et al.
patent: 5614743 (1997-03-01), Mochizuki
patent: 5633517 (1997-05-01), Saitoh
patent: 5689138 (1997-11-01), Dekker et al.

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