Static information storage and retrieval – Associative memories – Ferroelectric cell
Reexamination Certificate
2006-05-16
2006-05-16
Ho, Hoai V. (Department: 2827)
Static information storage and retrieval
Associative memories
Ferroelectric cell
C365S189070, C365S204000
Reexamination Certificate
active
07046537
ABSTRACT:
A Content Addressable Memory device with a bit line that is driven between first and second voltage levels depending on the state of a logic signal applied thereto. The magnitude of the voltage swing between the first and second voltage levels is reduced in comparison to other voltages of the Content Addressable Memory device, or in comparison to the voltage swing of prior art bit lines, so that effects associated with power dissipation by the bit line are reduced. The memory includes a plurality of match lines and a plurality of bit lines, each of the plurality of bit lines coupled to a bit line driver circuit adapted to provide a bit line voltage with reduced signal swing.
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Dickstein , Shapiro, Morin & Oshinsky, LLP
Ho Hoai V.
Micro)n Technology, Inc.
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