Reduced path ion beam implanter

Details Reduced path ion beam implanter Reduced path ion beam implanter

1991-02-25

1992-02-25

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, 3133601, 3133611, H01V 37317

Patent

active

050916556

ABSTRACT:
An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel plates that are biased by a control circuit. Once deflected, the ion beam enters an accelerator that both redeflects the once deflected ion beam and acceleratres the ions to a desired final energy. When the beam exits the accelerator it moves along a trajectory that impacts a workpiece. Ions making up the ion beam all impact the workpiece at a uniform, controlled impact angle.

REFERENCES:
patent: 3731211 (1973-05-01), Purser
patent: 4276477 (1981-06-01), Enge
patent: 4383180 (1983-05-01), Turner
patent: 4661712 (1987-04-01), Mobley
patent: 4687936 (1987-08-01), McIntyre et al.
patent: 4782304 (1988-11-01), Aitken
patent: 4794305 (1988-12-01), Matsukawa
patent: 4922106 (1990-05-01), Berrian et al.
patent: 4942342 (1990-07-01), Tsukakoshi
Nissin Electric; Ion Implantation System Type NH-20SP; Cat. No. 1418.
New Generation Ion Implanter for Sub-Micron Era ULVAC Corporation; Model IPX-7000.

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