Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-12-29
2000-09-26
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438700, 438706, H01L 21302, H01L 21461
Patent
active
061242063
ABSTRACT:
An improved hard mask is provided to reduced pad erosion during semiconductor fabrication. The hard mask includes an etch stop layer between first and second hard mask layers.
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Flietner Bertrand
Gschoederer Monika
Ploessl Robert
Braden Stanton C.
Deo Duy-Vu
Siemens Aktiengesellschaft
Utech Benjamin L.
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