Reduced notching of polycide gates using silicon anti reflection

Details Reduced notching of polycide gates using silicon anti reflection Reduced notching of polycide gates using silicon anti reflection

1995-05-25

1997-02-18

Niebling, John

Fishing, trapping, and vermin destroying

437193, 437 41, H01L 2128

Patent

active

056041578

ABSTRACT:
A method for fabricating MOSFET devices, with narrow gate structures, and narrow spaces between gate structures, has been developed. The addition of a rough surfaced silicon layer, as part of the gate structure, minimizes the amount of reflective and scattered light, resulting during the gate photolithographic processing. The reduction in reflective and scattered greatly enhances the ability to achieve sub-micron lines and spaces. The rough surfaced silicon can remain as a part of the gate structure, and is obtained by chemical vapor deposition of either an amorphous silicon, or a hemi-spherical grained silicon film.

REFERENCES:
patent: 4740484 (1988-04-01), Norstrom et al.
patent: 4782033 (1988-11-01), Gierish et al.
patent: 4933304 (1990-06-01), Chen et al.
patent: 4935380 (1990-06-01), Okumuro
patent: 5068697 (1991-11-01), Noda
patent: 5139974 (1992-08-01), Sandhu et al.
patent: 5302538 (1994-04-01), Ishikowa et al.
patent: 5312780 (1994-05-01), Nanda et al.
patent: 5441914 (1995-08-01), Taft et al.
patent: 5498558 (1996-03-01), Kepoor
S. Wolf "Silicon Processing For the VLSI Era, vol.1", Lattice Press, 1986, pp. 177-184, 207, 208, 325, 326, 556-557.
Czech et al "Reduction of Line Width Variation For the Gate Conductor Level by Lithography Based on a New Antireflective Layer", Microelectronics Enigeering, vol. 21, 1993, pp. 51-56.
Dijkstro et al, "Optimization of Anti-Reflection Layers for Deep UV Lithography," SPIE vol. 1927, Optical/Microlithography VI, 1993, pp. 275-286.

Affiliated with

Also associated with

Rating

Reduced notching of polycide gates using silicon anti reflection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduced notching of polycide gates using silicon anti reflection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduced notching of polycide gates using silicon anti reflection will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1602185