Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1980-02-01
1982-10-26
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330264, 330300, H03F 316
Patent
active
043564534
ABSTRACT:
A grounded-source field-effect transistor amplifier circuit in which a constant current source is coupled to the source resistor to drain a current therethrough in addition to the normal source current with the amount of current chosen to equalize characteristics among different transistors. In a preferred application, two such transistors are coupled as a complementary pair with their drains connected to the inputs of a push-pull output stage. A variable resistor may be connected between the sources with its wiper connected to ground. A feedback resistor may be coupled between the output of the push-pull stage and the wiper of the variable resistor.
REFERENCES:
patent: 4008442 (1977-02-01), Todokoro
patent: 4021751 (1977-05-01), Suzuki
patent: 4086542 (1978-04-01), Kamiya
patent: 4092612 (1978-05-01), Schade, Jr.
patent: 4238737 (1980-12-01), Yokoyama
Mullins James B.
Pioneer Electronic Corporation
Wan Gene
LandOfFree
Reduced noise-improved gain transistor circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reduced noise-improved gain transistor circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduced noise-improved gain transistor circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-950602