Reduced mask configuration for power MOSFETs with...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S355000, C257SE29008, C257SE29015

Reexamination Certificate

active

07825431

ABSTRACT:
A semiconductor power device supported on a semiconductor substrate includes an electrostatic discharge (ESD) protection circuit disposed on a first portion of patterned ESD polysilicon layer on top of the semiconductor substrate. The semiconductor power device further includes a second portion of the patterned ESD polysilicon layer constituting a body implant ion block layer for blocking implanting body ions to enter into the semiconductor substrate below the body implant ion block layer. In an exemplary embodiment, the electrostatic discharge (ESD) polysilicon layer on top of the semiconductor substrate further covering a scribe line on an edge of the semiconductor device whereby a passivation layer is no longer required manufacturing the semiconductor device for reducing a mask required for patterning the passivation layer.

REFERENCES:
patent: 6249023 (2001-06-01), Finney
patent: 7126169 (2006-10-01), Kitabatake
patent: 7439597 (2008-10-01), Shiu et al.
patent: 7728385 (2010-06-01), Pan et al.
patent: 2003/0052367 (2003-03-01), Lin
patent: 2004/0097042 (2004-05-01), Hshieh et al.
patent: 2005/0227440 (2005-10-01), Ema et al.
patent: 2006/0071276 (2006-04-01), Zundel et al.
patent: 2007/0039923 (2007-02-01), Kim
patent: 2007/0176239 (2007-08-01), Hshieh
patent: 2007/0194374 (2007-08-01), Bhalla et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Reduced mask configuration for power MOSFETs with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduced mask configuration for power MOSFETs with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduced mask configuration for power MOSFETs with... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4163659

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.