Reduced leakage antifuse structure

Details Reduced leakage antifuse structure Reduced leakage antifuse structure

1995-06-06

1999-11-16

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 257209, H01L 2994

Patent

active

059863226

ABSTRACT:
An antifuse comprises an antifuse material disposed between a lower conductive electrode and an upper conductive electrode. The antifuse material comprises a layer of amorphous silicon disposed between two layers of silicon nitride. A thin layer of silicon dioxide is disposed between the layer of amorphous silicon and one of the silicon nitride layers.

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