Reduced leakage antifuse fabrication method

Details Reduced leakage antifuse fabrication method Reduced leakage antifuse fabrication method

1996-03-12

1998-06-09

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

438467, 438600, H01L 2182

Patent

active

057632995

ABSTRACT:
An antifuse includes an antifuse material disposed between a lower conductive electrode and an upper conductive electrode. The antifuse material includes a layer of amorphous silicon disposed between two layers of silicon nitride. A thin layer of silicon dioxide is disposed between the layer of amorphous silicon and one of the silicon nitride layers.

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