Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown
Reexamination Certificate
2006-08-29
2006-08-29
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With means to prevent edge breakdown
C257S480000, C257S260000
Reexamination Certificate
active
07098521
ABSTRACT:
Schottky barrier diodes use a dielectric separation region to bound an active region. The dielectric separation region permits the elimination of a guard ring in at least one dimension. Further, using a dielectric separation region in an active portion of the integrated circuit device may reduce or eliminate parasitic capacitance by eliminating this guard ring.
REFERENCES:
patent: 3742317 (1973-06-01), Shao
patent: 3891479 (1975-06-01), Zwernemann
patent: H0040 (1986-04-01), Buchanan et al.
patent: 5665993 (1997-09-01), Keller et al.
patent: 5696025 (1997-12-01), Violette et al.
patent: 6066884 (2000-05-01), Krutsick
patent: 6096618 (2000-08-01), Dunn et al.
patent: 6121122 (2000-09-01), Dunn et al.
patent: 6177712 (2001-01-01), Miyasaka
patent: 6303969 (2001-10-01), Tan
patent: 6580141 (2003-06-01), Hshieh et al.
patent: 63-115368 (1988-05-01), None
patent: 63-115369 (1988-05-01), None
patent: 2003-101036 (2003-04-01), None
Coolbaugh Douglas D.
Eshun Ebenezer E.
Joseph Alvin J.
Rassel Robert M.
Dickey Thomas L.
Greenblum & Bernstein P.L.C.
Kotulak, Esq. Richard M.
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