Reduced electromigration interconnection line

Details Reduced electromigration interconnection line Reduced electromigration interconnection line

1995-08-04

1998-01-27

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257211, 257767, 257775, H01L 23528, H01L 23535

Patent

active

057125104

ABSTRACT:
The electromigration lifetime of a metal interconnection line is increased by adjusting the length of the interconnection line, or providing longitudinally spaced apart holes or vias, to optimize the Backflow Potential Capacity of the metal interconnection line.

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