Reduced edge effect from recesses in imagers

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S040000, C257SE31121, C257SE31127

Reexamination Certificate

active

07952155

ABSTRACT:
Methods for making a recessed color filter array for a semiconductor imager employing a sidewall spacer for reducing an edge effect from the array are disclosed. In one embodiment, a substrate is provided having an upper surface. Then, a recess is formed into the upper surface of the substrate. The recess has a bottom and a sidewall. Subsequently, a sidewall spacer is formed on the sidewall of the recess. A color resist is deposited into the recess after forming the sidewall spacer. In the embodiment, the sidewall spacer is formed of a material having a surface energy lower than that of a material defining the bottom of the recess. The color resist adheres less to the sidewall than to the bottom of the recess. Thus, the color resist does not conform to a shape of an edge portion of the recess, thereby reducing the edge effect.

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