Reduced dark current cathode structures for infrared detection

Details Reduced dark current cathode structures for infrared detection Reduced dark current cathode structures for infrared detection

1997-02-03

1998-06-09

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 15, 257 21, 257 22, H01L 2906

Patent

active

057638969

ABSTRACT:
A separate absorption thermal conduction band infrared photocathode fabricated with an engineered material system having energy band gaps specifically selected to provide an energy barrier that is selectively tuned to the momentum and energy of the photogenerated carriers. Such a material system produces an infrared detector having a substantially reduced dark current.

REFERENCES:
patent: 5477060 (1995-12-01), Choi
patent: 5485015 (1996-01-01), Choi
patent: 5539206 (1996-07-01), Schimert

Affiliated with

Also associated with

Rating

Reduced dark current cathode structures for infrared detection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduced dark current cathode structures for infrared detection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduced dark current cathode structures for infrared detection will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2203177