Reduced current phase-change memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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Details

C257S002000, C257S003000, C257S005000, C365S163000

Reexamination Certificate

active

07667219

ABSTRACT:
A phase-change memory device more precisely controls electrical current required to accomplish a phase change by using contact holes that extend between phase change layers that are sized differently from each other.

REFERENCES:
patent: 7105870 (2006-09-01), Lee et al.
patent: 2005/0110983 (2005-05-01), Jeong et al.
patent: 2006/0003470 (2006-01-01), Chang
patent: 2007/0034905 (2007-02-01), Elkins

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