Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-05-24
2010-02-23
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S003000, C257S005000, C365S163000
Reexamination Certificate
active
07667219
ABSTRACT:
A phase-change memory device more precisely controls electrical current required to accomplish a phase change by using contact holes that extend between phase change layers that are sized differently from each other.
REFERENCES:
patent: 7105870 (2006-09-01), Lee et al.
patent: 2005/0110983 (2005-05-01), Jeong et al.
patent: 2006/0003470 (2006-01-01), Chang
patent: 2007/0034905 (2007-02-01), Elkins
Chang Heon Yong
Hong Suk Kyoung
Park Hae Chan
Hynix / Semiconductor Inc.
Khosraviani Arman
Ladas & Parry LLP
Loke Steven
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