Reduced-crosstalk wirebonding in an optical communication...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S784000, C257S786000, C438S208000, C438S912000

Reexamination Certificate

active

07872325

ABSTRACT:
Wirebonds are formed to couple an opto-electronic device chip having two or more opto-electronic devices to a signal processing chip. Two or more mutually adjacent wirebond groups, each corresponding to one of the opto-electronic devices, are formed. For example, each wirebond group can include a first wirebond coupling a P-terminal of the opto-electronic device of the wirebond group to the signal processing chip, a second wirebond coupling an N-terminal of the opto-electronic device of the wirebond group to the signal processing chip, and a third wirebond coupling the opto-electronic device chip to the signal processing chip.

REFERENCES:
patent: 5004317 (1991-04-01), Jackson et al.
patent: 5459284 (1995-10-01), Bockelman et al.
patent: 5883812 (1999-03-01), Fujii
patent: 6992377 (2006-01-01), Zhou et al.
patent: 2002/0089069 (2002-07-01), Lamson et al.
patent: 2008/0227284 (2008-09-01), Rebelo et al.
patent: 2009/0189059 (2009-07-01), Smith

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