Reduced crosstalk sensor and method of formation

Details Reduced crosstalk sensor and method of formation Reduced crosstalk sensor and method of formation

2004-02-20

2009-02-17

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S233000, C257S292000

Reexamination Certificate

active

07492027

ABSTRACT:
Isolation methods and devices for isolating regions of a semiconductor device are disclosed. The isolation methods and structures include forming an isolating trench among pixels or other active areas of a semiconductor device. The trench extends through the substrate to the base layer, wherein a liner may be deposited on the side walls of the trench. A conductive material is deposited into the trench to block electrons from passing through.

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