Reduced cracking in gap filling dielectrics

Details Reduced cracking in gap filling dielectrics Reduced cracking in gap filling dielectrics

1997-12-18

1999-11-23

Everhart, Caridad

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257760, 438623, 438624, 438697, H01L 2352

Patent

active

059905581

ABSTRACT:
Cracking of gap fill dielectric material in open fields bordering a dense array of conductive features on subsequent thermal processing is significantly reduced or avoided by etching to remove all or a portion of the dielectric material in the open field except for sidewall spacers on bordering metal features. Embodiments also include removing dielectric material from an upper surface of a metal feature having a surface area in excess of about 100 microns.sup.2 to avoid cracking on subsequent thermal processing. An oxide, such as silicon oxide derive from TEOS or silane is deposited and planarized, as by CMP. Embodiments include employing HSQ as a low dielectric constant gap fill material.

REFERENCES:
patent: 5486493 (1996-01-01), Jeng
patent: 5527737 (1996-06-01), Jeng
patent: 5591677 (1997-01-01), Jeng
patent: 5728628 (1998-03-01), Havemann

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