Reduced blooming device having enhanced quantum efficiency

Details Reduced blooming device having enhanced quantum efficiency Reduced blooming device having enhanced quantum efficiency

1979-05-10

1980-10-14

Edlow, Martin H.

357 30, 357 23, H01L 2714

Patent

active

042284465

ABSTRACT:
An imaging device such as silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included for controlling the blooming within the sensing region, and a passivation layer is provided for stabilizing the blooming characteristics. A coating, preferably zirconium oxide, is deposited on the passivation layer to combine with the passivation layer to form an anti-reflection region for enhancing the quantum efficiency of the device. The anti-reflection region has an optical thickness substantially equal to an odd multiple of a quarter of a wavelength of light incident on the device.

REFERENCES:
patent: 3548233 (1970-12-01), Cave
patent: 3755015 (1973-08-01), Redington
patent: 3786294 (1974-01-01), Wilson
patent: 3792197 (1974-02-01), Chai
patent: 3904453 (1975-09-01), Revesz

Affiliated with

Also associated with

Rating

Reduced blooming device having enhanced quantum efficiency does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduced blooming device having enhanced quantum efficiency, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduced blooming device having enhanced quantum efficiency will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2103799